VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 058451 | https://doi.org/10.1155/1998/58451

F. Oyafuso, P. von Allmen, M. Grupen, K. Hess, "Gain Calculation in a Quantum Well Laser Simulator Using an Eight Band k.p Model", VLSI Design, vol. 6, Article ID 058451, 5 pages, 1998. https://doi.org/10.1155/1998/58451

Gain Calculation in a Quantum Well Laser Simulator Using an Eight Band k.p Model


Effects of non-parabolicity and band-warping of the energy dispersion are entered in a quantum well laser simulator (MINILASE-II), which self-consistently solves Schödinger's equation, Poisson's equation, the drift diffusion equations, and the photon rate equations. An eight band k.p model is used to determine the electronic band structure for a strained-layer In.2Ga.8As/Al.1Ga.9As system. The k.p calculation is performed independently of the laser simulator, and exported to MINILASE-II in the form of a density of states and an energydependent averaged momentum matrix element. The results obtained for the gain and modulation response are compared to those obtained from a parabolic band model with a constant matrix element.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

More related articles

 PDF Download Citation Citation
 Order printed copiesOrder

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.