A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers
W.-K. Shih,1S. Jallepalli,1C.-F. Yeap,1M. Rashed,1C. M. Maziar,1and A. F. Tasch1
Abstract
Monte Carlo simulations of uniform silicon nMOSFET inversion layers have been performed.
Excellent agreement between the simulated and experimental transport characteristics
has been observed in the region of strong inversion at both 300K and 77K. The
contribution to the effective mobility due to individual subbands has been analyzed and qualitatively
explained.
