W.-K. Shih, S. Jallepalli, C.-F. Yeap, M. Rashed, C. M. Maziar, A. F. Tasch, "A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers", VLSI Design, vol. 6, Article ID 061931, 4 pages, 1998. https://doi.org/10.1155/1998/61931
A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers
Monte Carlo simulations of uniform silicon nMOSFET inversion layers have been performed. Excellent agreement between the simulated and experimental transport characteristics has been observed in the region of strong inversion at both 300K and 77K. The contribution to the effective mobility due to individual subbands has been analyzed and qualitatively explained.
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