VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 61931 | 4 pages | https://doi.org/10.1155/1998/61931

A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers

Abstract

Monte Carlo simulations of uniform silicon nMOSFET inversion layers have been performed. Excellent agreement between the simulated and experimental transport characteristics has been observed in the region of strong inversion at both 300K and 77K. The contribution to the effective mobility due to individual subbands has been analyzed and qualitatively explained.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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