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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 393-397

A Compound Semiconductor Process Simulator and its Application to Mask Dependent Undercut Etching

1NTT Opto-electronics Laboratories, Atsugi-shi, Japan
2NTT LSI Laboratories, Atsugi-shi, Japan

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper describes a process simulator that is designed to describe the etching and deposition processes used in constructing compound semiconductors, which have at least two different atomic species. This nature dictates a very different response to compound semiconductor process from the silicon process. One of the most remarkable processes in compound semiconductors is the reverse-mesa formation. This simulator successfully represents the mesa and the reverse mesa profiles that are often observed after chemical etching. The mask material dependence of the undercut etching can also be simulated with a good agreement between the experimental and the simulated shapes.