Table of Contents
VLSI Design
Volume 6, Issue 1-4, Pages 283-286
http://dx.doi.org/10.1155/1998/69105

Transient Analysis of Silicon Devices Using the Hydrodynamic Model

Dipartimento di Elettronica, Informatica e Sistemistica, Università di Bologna, Viale Risorgimento 2, Bologna 40136, Italy

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [1 citation]

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  • D. Munteanu, G. Le Carval, C. Fenouillet-Be´ranger, and O. Faynot, “Investigation of Nonstationary Transport and Quantum Effects in Realistic Deep Submicrometer Partially Depleted SOI Technology,” Electrochemical and Solid-State Letters, vol. 5, no. 5, pp. G29, 2002. View at Publisher · View at Google Scholar