VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 71521 | 4 pages | https://doi.org/10.1155/1998/71521

Comparison of Non-Parabolic Hydrodynamic Models Based On Different Band Structure Models


This paper presents two non-parabolic hydrodynamic model formulations suitable for the simulation of inhomogeneous semiconductor devices. The first formulation uses the Kane dispersion relationship, (ℏk)2/2m = W(1+αW). The second formulation makes use of a power law, (ℏk)2/2m = xWy, for the dispersion relation. The non-parabolicity and energy range of the hydrodynamic model based on the Kane dispersion relation is limited. The power law formulation produces closed form coefficients similar to those under the parabolic band approximation but the carrier concentration can deviate. An extended power law dispersion relation is proposed to account for band structure effects, (ℏk)2/2m = xW1+yW. This dispersion relation closely matches the calculated band structure over a wide energy range and may lead to closed form coefficients for the hydrodynamic model.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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