VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 072767 | https://doi.org/10.1155/1998/72767

Duilio Meglio, Corrado Cianci, Aldo Di Carlo, Paolo Lugli, "Non Local Impact Ionization Effects in Semiconductor Devices", VLSI Design, vol. 6, Article ID 072767, 7 pages, 1998. https://doi.org/10.1155/1998/72767

Non Local Impact Ionization Effects in Semiconductor Devices


Impact ionization processes define the breakdown characteristics of semiconductor devices. An accurate description of such phenomenon, however, is limited to very sophisticated device simulators such as Monte Carlo. A new physical model for the impact ionization process is presented, which accounts for dead space effects and high energy carrier transport at a Drift Diffusion level. Such model allows to define universal impact ionization coefficients which are device-geometry independent. By using available experimental data these parameters have been calculated for In0.53Ga0.47As.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

More related articles

 PDF Download Citation Citation
 Order printed copiesOrder

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.