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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 79-82

Macroscopic Device Simulation of InGaAs/InP Based Avalanche Photodiodes

1Microelectronics Research Center, Georgia Institute of Technology Atlanta, GA 30332-0269, USA
2Bell Northern Research, P.O. Box 3511 Station C , Ottawa KIY4H7, Canada

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In this paper, we analyze, based on a two-dimensional drift-diffusion simulation, how variations in the structural components of an InGaAs/InP separate absorption, grading, charge, and multiplication photodiode (SAGCM) alter its performance. The model is employed in conjunction with experimental measurements to enhance the understanding of the device performance. Calibration of the model to the material system and growth technique is performed via the analysis of a simpler, alternate structure. Excellent agreement between the calculated results and experimental measurements of the breakdown voltage, dark current, mesa punchthrough voltage, photoresponse, and gain are obtained.