Table of Contents
VLSI Design
Volume 6, Issue 1-4, Pages 185-189

Computation of the Spectral Density of Current Fluctuations in Bulk Silicon Based on the Solution of the Boltzmann Transport Equation

Department of Electrical Engineering and Computer Science, The George Washington University, Washington 20052, DC, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • A.J. Piazza, C.E. Korman, and A.M. Jaradeh, “A physics-based semiconductor noise model suitable for efficient numerical implementation,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 18, no. 12, pp. 1730–1740, 1999. View at Publisher · View at Google Scholar
  • L. Hlou, K. Amechnoue, J. Diyadi, J. C. Vaissiere, L. Varani, and A. Moatadid, “Correlation functions from multiple solution of the transient Boltzmann equation in semiconductors: Application to noise temperature of holes in silicon,” Journal of Applied Physics, vol. 88, no. 2, pp. 838, 2000. View at Publisher · View at Google Scholar