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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 197-200
http://dx.doi.org/10.1155/1998/79658

Modelling of Hot Acoustic Phonon Propagation in Two Dimensional Layers

1Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202, USA
2Institute of Semiconductor Physics, Kiev 252650, Ukraine

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The transport of confined acoustic phonons in a flee-standing quantum well has been studied by solving the quantum kinetic equation for phonons. The phonon decay rate has been numerically calculated for GaAs flee-standing quantum well. Phonon interaction with electrons through the deformation potential makes the major contribution to the acoustic phonon decay.