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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 307-311

New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator

1ll. Phys. Inst., Uni Köln, Zülpicher Str. 77, Köln D-50937, Germany
2Beckman Institute, University of lllinois, Urbana 61801, IL, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We introduce a new approach to hot electron effects in Si-MOSFETs, based on a mixture of evolutionary optimization algorithms and Monte Carlo technique. The Evolutionary Algorithm searchs for electron distributions which fit a given goal, for example a measured substrate current and in this way can calculate backwards electron distributions from measurement results. The search of the Evolutionary Algorithm is directed toward physically correct distributions by help of a Monte Carlo like mutation operator. Results for bulk-Si demonstrate the correctness of the physical model in the Monte Carlo like mutation operator and the backward calculation ability of the Evolutionary Algorithm. First results for Si-MOSFETs are qualitatively comparable to results of a Full Band Monte Carlo simulation.