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VLSI Design
Volume 6, Issue 1-4, Pages 307-311
http://dx.doi.org/10.1155/1998/81023

New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator

1ll. Phys. Inst., Uni Köln, Zülpicher Str. 77, Köln D-50937, Germany
2Beckman Institute, University of lllinois, Urbana 61801, IL, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

J. Jakumeit, U. Ravaioli, and K. Hess, “New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator,” VLSI Design, vol. 6, no. 1-4, pp. 307-311, 1998. https://doi.org/10.1155/1998/81023.