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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 205-208

A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure

Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, Vienna A-1040, Austria

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


To represent the valence bands of cubic semiconductors a coordinate transformation is proposed such that the hole energy becomes an independent variable. This choice considerably simplifies the evaluation of the integrated scattering probability and the choice of the state after scattering in a Monte Carlo procedure. In the new coordinate system, a numerically given band structure is expanded into a series of spherical harmonics. This expansion technique is capable of resolving details of the band structure at the Brillouin zone boundary and hence can span an energy range of several electron-volts. Results of a Monte Carlo simulation employing the new band representation are shown.