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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 103-106
http://dx.doi.org/10.1155/1998/85748

Three-Dimensional S-Matrix Simulation of Single-Electron Resonant Tunnelling Through Random Ionised Donor States

1Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
2Hitachi Cambridge Laboratory, Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, UK

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper presents a numerical study of single-electron resonant tunnelling (RT) assisted by a few ionised donors in a laterally-confined resonant tunnelling diode (LCRTD). The 3D multi-mode S-matrix simulation is performed newly introducing the scattering potential of discrete impurities. With a few ionised donors being placed, the calculated energy-dependence of the total transmission rate shows new resonances which are donor-configuration dependent. Visualised electron probability density reveals that these resonances originate in RT via single-donor-induced localised states. The I-V characteristics show current steps of order 0.1 nA per donor before the main current peak, which is quantitatively in good agreement with the experimental results.