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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 103-106
http://dx.doi.org/10.1155/1998/85748

Three-Dimensional S-Matrix Simulation of Single-Electron Resonant Tunnelling Through Random Ionised Donor States

1Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
2Hitachi Cambridge Laboratory, Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, UK

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Hiroshi Mizuta, “Three-Dimensional S-Matrix Simulation of Single-Electron Resonant Tunnelling Through Random Ionised Donor States,” VLSI Design, vol. 6, no. 1-4, pp. 103-106, 1998. doi:10.1155/1998/85748