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VLSI Design
Volume 6, Issue 1-4, Pages 209-212
http://dx.doi.org/10.1155/1998/87014

An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations

Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, Vienna A-1040, Austria

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

G. Kaiblinger-Grujin and H. Kosina, “An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations,” VLSI Design, vol. 6, no. 1-4, pp. 209-212, 1998. https://doi.org/10.1155/1998/87014.