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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 27-30

Electron Mobility and Monte Carlo device simulation of MOSFETs

1Department of Electronic Engineering Faculty of Engineering, Osaka University, Suita City, Osaka 565, Japan
2Electronics Research Laboratory Matsushita Electronics Corporation, Takatsuki City, Osaka 569, Japan
3Anan College of Technology, Anan City, Tokushima 774, Japan
4Department of Electrical and Computer Engineering, University of lllinois at Urbana-Champaign, Urbana 61801, IL, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [1 citation]

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  • Hiroaki Ueno, Takeshi Okagaki, Shigetaka Kumashiro, Tetsuya Yamaguchi, Noriaki Nakayama, Keiichi Morikawa, Daisuke Kitamaru, Masayasu Tanaka, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, and Kyoji Yamashita, “Quantum effect in sub-0.1 μm MOSFET with pocket technologies and its relevance for the on-current condition,” Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 41, no. 4B, pp. 2359–2362, 2002. View at Publisher ยท View at Google Scholar