VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 096493 | https://doi.org/10.1155/1998/96493

Leonard F. Register, "Simulation of Optical Excitation to and Emission from Electron Fabry-Perot States Subject to Strong Inelastic Scattering.", VLSI Design, vol. 6, Article ID 096493, 3 pages, 1998. https://doi.org/10.1155/1998/96493

Simulation of Optical Excitation to and Emission from Electron Fabry-Perot States Subject to Strong Inelastic Scattering.

Abstract

Photon induced carrier excitation to and escape from Fabry-Perot electron states in the presence of subsequent inelastic scattering is simulated. The Fabry-Perot states exist above a quantum well sandwiched between quarter-wave stacks of potential wells and barriers. Two numerical methods are used: simulation of inelastic scattering via absorbing (optical) potentials, and simulation via Schrödinger Equation Monte Carlo.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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