Leonard F. Register, "Simulation of Optical Excitation to and Emission from Electron Fabry-Perot States Subject to Strong Inelastic Scattering.", VLSI Design, vol. 6, Article ID 096493, 3 pages, 1998. https://doi.org/10.1155/1998/96493
Simulation of Optical Excitation to and Emission from Electron Fabry-Perot States Subject to Strong Inelastic Scattering.
Photon induced carrier excitation to and escape from Fabry-Perot electron states in the presence of subsequent inelastic scattering is simulated. The Fabry-Perot states exist above a quantum well sandwiched between quarter-wave stacks of potential wells and barriers. Two numerical methods are used: simulation of inelastic scattering via absorbing (optical) potentials, and simulation via Schrödinger Equation Monte Carlo.
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