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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 131-135
http://dx.doi.org/10.1155/1998/97564

2D Finite Element Method Simulation of Lateral Resonant Tunneling Devices

Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Using the finite element method, we investigate device applications of lateral resonant tunneling structures which consist of a transmission channel with attached resonators. Such structure exhibits resonance-antiresonance transmission features which may be engineered to achieve desired device properties. We show that the valley current can be reduced in such 2D lateral resonant tunneling devices, resulting in an improved current peak-to-valley ratio.