O. Muscato, R. M. Pidatella, M. V. Fischetti, "Monte Carlo and hydrodynamic simulation of a one dimensional n+ n n+ silicon diode", VLSI Design, vol. 6, Article ID 098910, 4 pages, 1998. https://doi.org/10.1155/1998/98910
Monte Carlo and hydrodynamic simulation of a one dimensional n+ n n+ silicon diode
An improved closure relation - based on the entropy principle - is implemented in a Hydrodynamic model for electron transport. Steady-state electron transport in the “benchmark” n+ - n - n+ submicron silicon diode is simulated and the quality of the model is assessed by comparison with Monte Carlo results.
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