VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 098910 | https://doi.org/10.1155/1998/98910

O. Muscato, R. M. Pidatella, M. V. Fischetti, "Monte Carlo and hydrodynamic simulation of a one dimensional n+ – n – n+ silicon diode", VLSI Design, vol. 6, Article ID 098910, 4 pages, 1998. https://doi.org/10.1155/1998/98910

Monte Carlo and hydrodynamic simulation of a one dimensional n+ – n – n+ silicon diode

Abstract

An improved closure relation - based on the entropy principle - is implemented in a Hydrodynamic model for electron transport. Steady-state electron transport in the “benchmark” n+ - n - n+ submicron silicon diode is simulated and the quality of the model is assessed by comparison with Monte Carlo results.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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