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VLSI Design
Volume 6, Issue 1-4, Pages 247-250
http://dx.doi.org/10.1155/1998/98910

Monte Carlo and hydrodynamic simulation of a one dimensional n+ – n – n+ silicon diode

1Dipartimento di Matematica, Viale Andrea Doria, Catania 95125, Italy
2lBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

An improved closure relation - based on the entropy principle - is implemented in a Hydrodynamic model for electron transport. Steady-state electron transport in the “benchmark” n+ - n - n+ submicron silicon diode is simulated and the quality of the model is assessed by comparison with Monte Carlo results.