VLSI Design

VLSI Design / 1999 / Article

Open Access

Volume 9 |Article ID 052841 | https://doi.org/10.1155/1999/52841

A. Srivastava, "Influence of BJT Transit Frequency Limit Relation to MOSFET Parameters on the Switching Speed of BiCMOS Digital Circuits", VLSI Design, vol. 9, Article ID 052841, 9 pages, 1999. https://doi.org/10.1155/1999/52841

Influence of BJT Transit Frequency Limit Relation to MOSFET Parameters on the Switching Speed of BiCMOS Digital Circuits

Received25 Mar 1997
Revised04 Dec 1997

Abstract

The use is made of the BJT transit frequency limit (fTL) dependence on the MOSFET parameters (L, Vth) to design BiCMOS digital circuits. The fTL relation is used in conjunction with the established BiCMOS gate delay models. It is shown that the minimum delay BiCMOS circuits driving the large capacitive load, can be designed at the transit frequency limit with the reduced BJT AREA factor. The time delay calculations are presented for a typical BiCMOS circuit and comparison is made with the results simulated using SPICE.

Copyright © 1999 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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