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VLSI Design
Volume 15, Issue 4, Pages 743-750
http://dx.doi.org/10.1080/1065514021000012354

Particle-based Full-band Approach for Fast Simulation of Charge Transport in Si, GaAs, and InP

1Department of Electrical and Computer Engineering, Illinois Institute of Technology, 3301 South Dearborn, Chicago, IL 60616-3793, USA
2Agere Systems, Allentown, PA, USA
3Department of Electrical Engineering, Arizona State University, Tempe, AZ, USA

Received 1 May 2001; Revised 1 April 2002

Copyright © 2002 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Marco Saraniti, Yibing Hu, and Stephen M. Goodnick, “Particle-based Full-band Approach for Fast Simulation of Charge Transport in Si, GaAs, and InP,” VLSI Design, vol. 15, no. 4, pp. 743-750, 2002. https://doi.org/10.1080/1065514021000012354.