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VLSI Design
Volume 15 (2002), Issue 4, Pages 681-693

Two-valley Hydrodynamical Models for Electron Transport in Gallium Arsenide: Simulation of Gunn Oscillations

Dipartimento di Matematica e Informatica, Università di Catania, viale A. Doria 6, Catania 95125, Italy

Received 1 May 2001; Revised 1 April 2002

Copyright © 2002 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


To accurately describe non-stationary carrier transport in GaAs devices, it is necessary to use Monte Carlo methods or hydrodynamical (or energy transport) models which incorporate population transfer between valleys.We present here simulations of Gunn oscillations in a GaAs diode based on two-valley hydrodynamical models: the classic Bløtekjær model and two recently developed moment expansion models. Scattering parameters within the models are obtained from homogeneous Monte Carlo simulations, and these are compared against expressions in the literature. Comparisons are made between our hydrodynamical results, existing work, and direct Monte Carlo simulations of the oscillator device.