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VLSI Design
Volume 2008 (2008), Article ID 479173, 6 pages
Research Article

Design of CMOS Tunable Image-Rejection Low-Noise Amplifier with Active Inductor

1Microelectronics and Computer Department, Faculty of Electrical Engineering, University of Technology Malaysia, Skudai, Johor 81310, Malaysia
2Device Modeling Department, Silterra Malaysia Sdn. Bhd., 09000 Kulim, Kedah, Malaysia

Received 13 June 2007; Accepted 17 December 2007

Academic Editor: Jose Silva-Martinez

Copyright © 2008 Ler Chun Lee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A fully integrated CMOS tunable image-rejection low-noise amplifier (IRLNA) has been designed using Silterra's industry standard 0.18  RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contributes additional 1.19 dB to the noise figure of the low-noise amplifier (LNA). A better result is possible if the active inductor is optimized. Since active inductors require less die area, the die area occupied by the IRLNA is not significantly different from a conventional LNA, which was designed for comparison. The proposed IRLNA exhibits S21 of 11.8 dB, S11 of  dB, S22 of  dB, and input 1 dB compression point of  dBm at 3 GHz