Device and Circuit Design Challenges in the Digital Subthreshold Region for Ultralow-Power Applications

Table 1

Device-and circuit-level implications due to changing channel doping profile for subthreshold operation [9].

Parameter	Standard device	Optimized device
S (mv/decade)	90	83
𝐶i (F/𝜇m)	4.9 × 10^−16	3.2 × 10^−16
𝐼ON (A/m)	0.101	0.162
PDP(J)@𝑉dd = 200 mv	5.5 × 10^−16	2.8 × 10^−16