VLSI Design

VLSI Design / 2009 / Article / Fig 10

Research Article

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Figure 10

(a) Summation of power of sources in the circuit including input waveform generators and bias sources ( ). (b) Integral of total, that is, static and dynamic, power consumption for power of sources (see (3)). The input waveforms are same as Figure 9(a).
803974.fig.0010a
(a)
803974.fig.0010b
(b)

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