VLSI Design

VLSI Design / 2009 / Article / Fig 10

Research Article

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Figure 10

(a) Summation of power of sources in the circuit including input waveform generators and bias sources ( ). (b) Integral of total, that is, static and dynamic, power consumption for power of sources (see (3)). The input waveforms are same as Figure 9(a).

We are committed to sharing findings related to COVID-19 as quickly and safely as possible. Any author submitting a COVID-19 paper should notify us at help@hindawi.com to ensure their research is fast-tracked and made available on a preprint server as soon as possible. We will be providing unlimited waivers of publication charges for accepted articles related to COVID-19. Sign up here as a reviewer to help fast-track new submissions.