A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

<table>XOR based on controlled quenching of series connected negative differential resistance (NDR) devices (the figure selected from [<a href="/journals/vlsi/2009/803974/#B14">14</a>]).</table>

VLSI Design

fig3

Figure 3

Figure 3: A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor 