VLSI Design

VLSI Design / 2009 / Article / Fig 4

Research Article

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Figure 4

(a) Epitaxial structures of RTHEMT, (b) Isolated RTD I-V curve and (b) RTHEMT I-V characteristic. As reported in original paper, the RTD has a P/V ratio of at room temperature, with a peak voltage of and valley voltage of 0.4 V. The peak current density is 62 KA/cm2 (all figures selected from [6]).
803974.fig.004a
(a)
803974.fig.004b
(b)
803974.fig.004c
(c)

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