Review Article
Advancement in Nanoscale CMOS Device Design En Route to Ultra-Low-Power Applications
Table 1
Technology scaling rules for three cases [
8].
| Physical parameters | Constant electric field scaling factor | Generalized scaling factor | Generalized selective scaling factor |
| Channel length, insulator thickness | 1/α | 1/α | 1/α d | Wiring width, channel width | 1/α | 1/α | 1/α w | Electric field in device | 1 | ε | ε | Voltage | 1/α | ε/α | ε/α d | On-current per device | 1/α | ε/α | ε/α d | Doping | α | εα | εα d | Area | 1/α 2 | 1/α 2 | 1/ | Capacitance | 1/α | 1/α | 1/α w | Gate delay | 1/α | 1/α | 1/α d | Power dissipation | 1/α 2 | ε 2/α 2 | ε 2/α wα d | Power density | 1 | ε 2 | ε 2α w/α d |
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