High-Efficient Circuits for Ternary Addition

Table 4

CNTFET model parameters.

Parameter	Description	Value
	Physical channel length	32 nm
	The mean free path in the intrinsic CNT channel	100 nm
/	The length of doped CNT drain/source-side extension region	32 nm
	The dielectric constant of high-k top gate	16
	The thickness of high-k top gate dielectric material	4 nm
	The coupling capacitance between the channel region and the substrate	20 pF/m
Efi	The Fermi level of the doped S/D tube	6 eV