The Design of Low Noise Amplifiers in Deep Submicron CMOS Processes: A Convex Optimization Approach

Table 4

Technology parameters for 90 nm and 180 nm CMOS processes.

Parameters	90 nm	180 nm
Electron mobility	0.0179 m^2/V	0.0288 m^2/V
Electron velocity saturation	1.10 × 10^5 m/s	9.18 × 10^5 m/s
Oxide capacitance per unit area	0.014 F/m^2	0.00857 F/m^2
Body effect coefficient	1.21	1.18
Vertical field mobility degradation factor	0.3 V^−1	0.2 V^−1
Channel-length modulation parameter	0.4 V^−1	0.3 V^−1