The Design of Low Noise Amplifiers in Deep Submicron CMOS Processes: A Convex Optimization Approach

Table 5

Optimal design results for low-noise amplifier when input circuit quality factor and output circuit quality factor .

Parameters	90 nm	180 nm
Output conductance ()	0.0082 S	0.0063 S
Transconductance ()	0.0069 S	0.0052 S
Gate width ()	22.172 µm	27.006 µm
Gate length ()	90 nm	180 nm
factor (	0.1128	0.1681
Gate intrinsic capacitance ()	18.696 fF	27.87 fF
Additional capacitance ()	0.147 pF	0.13792 pF
Source inductor ()	1.2063 nH	1.5828 nH
Gate inductor ()	25.32 nH	24.943 nH
Drain current ()	0.5 mA	0.5 mA
Minimum noise figure ()	0.6076 dB	0.8229 dB