Table 2: Comparison between ZBB, DTMOS, and GLBB schemes at nominal conditions (TT process corner, = 0.3 V, and = 27°C).

ZBBDTMOSGLBB

Silicon area [µm2]20.7123.260.5
Delay [µs]0.700.780.59
Leakage current [nA]0.200.240.21
Energy per operation
( = 80 FO4, = 0.2) [fJ]
0.752.270.57