Research Article

Study of Linearity and Power Consumption Requirements of CMOS Low Noise Amplifiers in Context of LTE Systems and Beyond

Table 1

Sensitivity and noise for LTE Band 2.

Param.Bandwidth (MHz)
1.435101520

(dBm)−103−100−98−95−93−92
Noise floor (dBm)−113−109−107−104−102−101
Rx Margin (dB)1296679
Int BW (MHz)1.435