International Scholarly Research Notices

Research Article

Study of Linearity and Power Consumption Requirements of CMOS Low Noise Amplifiers in Context of LTE Systems and Beyond

Table 2

Calculated IIP3 for LTE assuming two −46 dBm interferers (in-band) and −31 dBm interference (out-of-band).
BW (MHz)P IM3 (dBm)In-band IIP3 (dBm)Out-of-band IIP3 (dBm)
1.4−101.28−18.36+4.19
3−100.58−18.71+3.84
5−102.24−17.88+4.68
10−102.24−17.88+4.68
15−100.74−18.63+3.92
20−98.59−19.70+2.85