Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

<table class="figure-group"><tr class="fig-image" id="a"><td><object data="https://static.hindawi.com/articles/acmp/volume-2015/423074/figures/423074.fig.003a.svgz" name="423074.fig.003a" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(a) </b>Low doping</td></tr><tr class="fig-image" id="b"><td><object data="https://static.hindawi.com/articles/acmp/volume-2015/423074/figures/423074.fig.003b.svgz" name="423074.fig.003b" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(b) </b>High doping</td></tr></table>

<div>Illustration of the energy band of (a) low doping and (b) high doping concentrations.</div>

Advances in Condensed Matter Physics

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Figure 3

Figure 3: Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications 