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Advances in Condensed Matter Physics publishes research on the experimental and theoretical study of the physics of materials in solid, liquid, amorphous, and exotic states.
Chief Editor, Professor Ulloa, is based at Ohio University and is a condensed matter theorist. His research is focussed on the electronic properties of nanostructures including quantum dots and nanowires, as well as proximity effects in 2D crystals.
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Ab Initio High-Pressure Study of Semiconductor-Metal Phase Transition of the Chalcogenide Compound KPSe6
We report the results of pressure-induced semiconductor-metal phase transition of the semiconducting chalcogenide compound KPSe6 under high pressure using the ab initio methods. The ground-state energy calculations were performed within density functional theory and the generalized gradient approximation using the pseudopotential method with plane-wave basis sets. The projector augmented-wave (PAW) pseudopotentials were used in our calculation. The optimized lattice parameters were found from total energy calculations as 13 Bohr, 1.6 Bohr, and 1.8 Bohr for cell dimensions one, two, and three, respectively, which are in good agreement with experimental calculations. At zero pressure, the material portrayed a semiconducting property with a direct bandgap of ≈1.7 eV. As we subjected the material to pressure, the band gap was observed to reduce until it disappeared. The phase transition from the semiconductor to metal was found to occur at ∼45 GPa, implying that the material underwent metallization as pressure was increased further.
Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode
The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band.
Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit
In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the industry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier circuit are commonly used. Compared with Ge semiconductor, strained Ge semiconductor on Si substrate has the advantages of compatibility with Si process, low cost, and high electron mobility. It is an ideal replacement material for Ge semiconductor applications. In view of this, based on the model of the relationship between the performance of strained Ge semiconductor on Si substrate Schottky diodes and the geometric parameters of the device and the physical parameters of the material, Silvaco TCAD and ADS simulation software are jointly used to propose a novel strained Ge semiconductor on Si substrate Schottky diode for microwave rectification circuit. Simulation results show that the strained Ge semiconductor on Si substrate Schottky diode has a rectification efficiency of 70.1% when the input of the rectifier circuit is 20 dBm, the load resistance is R = 1000 Ω, and the load capacitance is C = 100 pF. Compared with traditional Ge Schottky diodes, this optimal operating point is closer to a low energy density, which is beneficial to a wide range of energy absorption. Studies have shown the feasibility of replacing Ge Schottky diodes. The research in this paper can provide valuable reference for the design and development of the core components of the rectifier circuit of the microwave infinite energy transmission system.
Electronic Structure and Room Temperature of 2D Dilute Magnetic Semiconductors in Bilayer MoS2-Doped Mn
The electronic structure and magnetic properties of manganese- (Mn-) doped bilayer (BL) molybdenum disulfide (MoS2) are studied using the density function theory (DFT) plus on-site Hubbard potential correction (U). The results show that the substitution of Mn at the Mo sites of BL MoS2 is energetically favorable under sulfur- (S-) rich regime than Mo. The magnetic interaction between the two manganese (Mn) atoms in BL MoS2 is always ferromagnetic (FM) irrespective of the spatial distance between them, but the strength of ferromagnetic interaction decays with atomic distance. It is also found that two dopants in different layers of BL MoS2 communicate ferromagnetically. In addition to this, the detail investigation of BL MoS2 and its counterpart of monolayer indicates that interlayer interaction in BL MoS2 affects the magnetic interaction in Mn-doped BL MoS2. The calculated Curie temperature is 324, 418, and 381 K for impurity concentration of , , and , respectively, which is greater than room temperature, and the good dilute limit of dopant concentration is 0–6.25%. Based on the finding, it is proposed that Mn-doped BL MoS2 are promising candidates for two-dimensional (2D) dilute magnetic semiconductor (DMS) for high-temperature spintronics applications.
Experimental Study on Liquid Flow and Heat Transfer in Rough Microchannels
Although roughness is negligible for laminar flow through tubes in classic fluid mechanics, the surface roughness may play an important role in microscale fluid flow due to the large ratio of surface area to volume. To further verify the influence of rough surfaces on microscale liquid flow and heat transfer, a performance test system of heat transfer and liquid flow was designed and built, and a series of experimental examinations are conducted, in which the microchannel material is stainless steel and the working medium is methanol. The results indicate that the surface roughness plays a significant role in the process of laminar flow and heat transfer in microchannels. In microchannels with roughness characteristics, the Poiseuille number of liquid laminar flow relies not only on the cross section shape of the rough microchannels but also on the Reynolds number of liquid flow. The Poiseuille number of liquid laminar flow in rough microchannels increases with increasing Reynolds number. In addition, the Nusselt number of liquid laminar heat transfer is related not only to the cross section shape of a rough microchannel but also to the Reynolds number of liquid flow, and the Nusselt number increases with increasing Reynolds number.
Josephson Current through a Quantum Dot Connected with Superconducting Leads
In this study, we consider the Josephson current in a system composed of a superconductor/quantum dot/superconductor junction. In the model, the Coulomb interaction in the quantum dot is taken into consideration, and the Lacroix approximation is applied to study the electron correlation. We derive Green’s function of the quantum dot by applying the Lacroix truncation. Although the Andreev bound state does not occur in our formulations, the π-junction occurs for a restricted parameter range. On comparing the Kondo temperature with that estimated by another method, it is found that our Lacroix approximation does not capture well the Kondo physics in the superconductor/quantum dot/superconductor junction.