PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells
Figure 1
Simulated open-circuit voltage (left) and simulated energy conversion efficiency versus the effective rear surface recombination velocity for high-efficiency solar cells. Calculated using PC1D.
Parameters: cm−3, s (approx. Auger limit), textured front, front emitter: 120 Ω/sq, cm/s.
