Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

Table 1

Design parameters of 4H-SiC impatt at thz frequency.

DDR diode type	Doping conc. (𝑛 region) (10^24 m^−3)	Doping conc. (𝑝 region) (10^23 m^−3)	Width of the 𝑛 region (nm)	Width of the 𝑝 region (nm)	Current density (10^10 A m^−2)
4H-SiC	3.0	3.0	80.0	80.0	1.37