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Active and Passive Electronic Components
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Active and Passive Electronic Components
/
2008
/
Article
/
Tab 2
/
Research Article
Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime
Table 2
Dc and small-signal properties of 4H-SiC IMPATT diode.
Diode parameters
4H-SiC DDR IMPATT
(10
8
V m
−1
)
5.25
(V)
55.3
η (%)
10.5
(THz)
0.7
−
(10
8
S m
−2
)
7.40
−
1.6
(
Ω) (10
11
Wm
−2
)
2.8
(
Ω) (10
11
Wm
−2
)
2.5