A Novel Nanoscale FDSOI MOSFET with Block-Oxide

<table>Simulated lateral electron temperature (<svg height="11.175" id="M115" style="vertical-align:-0.0pt" version="1.1" viewbox="0 0 11.5625 11.175" width="11.5625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.113)"><path d="M667 0h-153l-248 291q-28 32 -54 27v-190q0 -65 14.5 -80t77.5 -20v-28h-260v28q58 5 71 20t13 80v392q0 48 -6 66.5t-22 25.5t-59 10v28h258v-28q-59 -5 -73 -20.5t-14 -81.5v-175q29 6 70 45q101 97 167 178q23 27 20 37t-36 14l-23 3v28h240v-28q-57 -5 -86 -18.5
t-76 -56.5q-40 -35 -177 -175q97 -124 235 -272q39 -41 61.5 -54t59.5 -18v-28z" id="x4B"></path></g>
</svg>) as a function of lateral distance along the MOSFETs channel surface with gate length <svg height="15.45" id="M116" style="vertical-align:-3.43848pt" version="1.1" viewbox="0 0 54.8125 15.45" width="54.8125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M559 163q-23 -66 -68 -163h-474l6 26q62 4 79.5 19.5t28.5 75.5l78 409q7 35 8.5 49t-8 25t-24 13t-51.5 5l5 28h266l-6 -28q-65 -5 -79.5 -18t-25.5 -74l-76 -406q-10 -57 14 -75q12 -13 96 -13q93 0 126 29q41 40 76 109z" id="x1D43F"></path></g>
<g transform="matrix(.012,-0,0,-.012,9.763,15.187)"><path d="M713 296l-5 -25q-47 -7 -59 -20t-23 -72l-15 -79q-9 -48 -3 -74q-15 -3 -55 -13t-63 -15t-59.5 -10t-70.5 -5q-149 0 -243 80t-94 220q0 169 127.5 276.5t336.5 107.5q91 0 206 -36l-10 -165l-29 -1q1 85 -47.5 126t-146.5 41q-153 0 -243.5 -97t-90.5 -242
q0 -122 68.5 -198.5t188.5 -76.5q121 0 139 75l20 86q13 58 -1.5 70.5t-99.5 20.5l5 26h267z" id="x1D43A"></path></g>
<g transform="matrix(.017,-0,0,-.017,23.725,11.112)"><path d="M535 323h-483v50h483v-50zM535 138h-483v50h483v-50z" id="x3D"></path></g><g transform="matrix(.017,-0,0,-.017,38.412,11.112)"><path d="M285 378v-2q65 -13 102 -54.5t37 -97.5q0 -57 -30.5 -104.5t-74 -75t-85.5 -42t-72 -14.5q-31 0 -59.5 11t-40.5 23q-19 18 -16 36q1 16 23 33q13 10 24 0q58 -51 124 -51q55 0 88 40t33 112q0 64 -39 96.5t-88 32.5q-29 0 -64 -11l-6 29q77 25 118 57.5t41 84.5
q0 45 -26.5 69.5t-68.5 24.5q-67 0 -120 -79l-20 20l43 63q51 56 127 56h1q66 0 107 -37t41 -95q0 -42 -31 -71q-22 -23 -68 -54z" id="x33"></path></g><g transform="matrix(.017,-0,0,-.017,46.571,11.112)"><path d="M137 343l67 33q37 17 63 17q79 0 129.5 -53t50.5 -131q0 -92 -58 -156.5t-147 -64.5t-147 68t-58 182q0 63 17 119t43 95.5t61.5 72t69 52t67.5 31.5q62 22 128 33l6 -32q-56 -11 -108 -35q-149 -71 -184 -231zM227 337q-47 0 -95 -27q-6 -23 -6 -70q0 -93 36 -155.5
t96 -62.5q53 0 78 45.5t25 105.5q0 68 -35 116t-99 48z" id="x36"></path></g>
</svg> nm.</table>

Active and Passive Electronic Components

A Novel Nanoscale FDSOI MOSFET with Block-Oxide

Figure 10