Research Article

A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

Figure 2

Comparing SC behaviour of 1.7 kV/50 A devices SiC MOSFET and IGBT @ = 1000 V; = 20 V; = 15 V; = 6.8 Ω; = 60 nH; and = 25°C.