Research Article
Design and Implementation of a Modular Bidirectional Switch Using SiC-MOSFET for Power Converter Applications
Figure 1
Topologies of the Bi-Sw (a) diode bridge with an IGBT arrangement, (b) anti-paralleled reverse blocking IGBTs (RB-IGBT) arrangement, (c) common emitter (CE) anti-paralleled IGBT arrangement, and (d) common collector (CC) anti-paralleled IGBT arrangement.
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(b) |
(c) |
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