Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

Figure 5

Reverse bias I-V characteristics of the Pt Schottky contacts to 𝑎-plane n-GaN extracted from Figure 2 [26] (symbols) fitted to theory (solid curves) Parameters: 𝜀_𝑇=0.72 eV, m* = 0.222 m_e, ℏ𝜛=70 meV, 𝑎=1.45. Assessed state density 𝑁_𝑆=1.4. 10¹³ cm^-2.