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Advances in Condensed Matter Physics
Volume 2011 (2011), Article ID 216065, 5 pages
http://dx.doi.org/10.1155/2011/216065
Research Article

First-Principles Calculation on Initial Stage of Oxidation of Si (110)-(1 × 1) Surface

Department of System Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan

Received 4 October 2010; Revised 24 December 2010; Accepted 7 February 2011

Academic Editor: Rosa Lukaszew

Copyright © 2011 Takahiro Nagasawa and Koji Sueoka. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Takahiro Nagasawa and Koji Sueoka, “First-Principles Calculation on Initial Stage of Oxidation of Si (110)-(1 × 1) Surface,” Advances in Condensed Matter Physics, vol. 2011, Article ID 216065, 5 pages, 2011. doi:10.1155/2011/216065