TEM Observation of the Dislocations Nucleated from Cracks inside Lightly or Heavily Doped Czochralski Silicon Wafers

<table>Typical image of optical microscopy for indent introduced with Vickers hardness tester at room temperature with load of 100 gf for 10 sec in lightly B doped Si.</table>

Advances in Condensed Matter Physics

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Figure 1

Figure 1: TEM Observation of the Dislocations Nucleated from Cracks inside Lightly or Heavily Doped Czochralski Silicon Wafers 