TEM Observation of the Dislocations Nucleated from Cracks inside Lightly or Heavily Doped Czochralski Silicon Wafers

Figure 4

Cross-sectional TEM images of heavily B doped Si including crack after heat-treatment at 900°C for 30 min. Indent is introduced at room temperature with Vickers hardness tester with load of 50 gf for 10 sec.