Experimental Progress towards Probing the Ground State of an Electron-Hole Bilayer by Low-Temperature Transport

Figure 10

Drag resistivity measured on electron (a) and hole layer (b) versus temperature for 𝑛=𝑝=4,5,6,7,8,9×10¹⁰  cm⁻², down to 300 mK. (Inset) Expanded low-temperature drag resistivity measured on hole layer. For the lowest density, 𝑘_F𝑑≈1.25, 𝑟_𝑠,e=2.8, and 𝑟_𝑠,h≈14.1. (Device: B138/C4-2-10 nm Barrier).

(a)

(b)