Experimental Progress towards Probing the Ground State of an Electron-Hole Bilayer by Low-Temperature Transport

<table>Resistivities of hole and electron layers versus temperature for <svg height="20.2125" id="M363" style="vertical-align:-3.50804pt" version="1.1" viewbox="0 0 126.5125 20.2125" width="126.5125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> cm<sup>−2</sup>, with 25 nm Al<sub>0.3</sub>Ga<sub>0.7</sub> As barrier. (Device: B135/C3-4-25 nm Barrier).</table>

Advances in Condensed Matter Physics

fig20

Figure 20

Figure 20: Experimental Progress towards Probing the Ground State of an Electron-Hole Bilayer by Low-Temperature Transport 