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Advances in Condensed Matter Physics
Volume 2012, Article ID 176053, 7 pages
http://dx.doi.org/10.1155/2012/176053
Research Article

Ge/Si Quantum Dots Superlattices Grown at Different Temperatures and Characterized by Raman Spectroscopy and Capacitance Measurements

1Department of Physics, Federal University of São Carlos, CP 676, 13565-905 São Carlos, SP, Brazil
2Institute of Semiconductor Physics, Novosibirsk 630090, Russia
3Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz, Germany

Received 28 March 2012; Accepted 31 July 2012

Academic Editor: Michael C. Tringides

Copyright © 2012 A. D. Rodrigues et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

A. D. Rodrigues, A. J. Chiquito, G. Zanelatto, et al., “Ge/Si Quantum Dots Superlattices Grown at Different Temperatures and Characterized by Raman Spectroscopy and Capacitance Measurements,” Advances in Condensed Matter Physics, vol. 2012, Article ID 176053, 7 pages, 2012. https://doi.org/10.1155/2012/176053.